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| AP2307N Advanced Power Electronics Corp. Simple Drive Requirement Small Package Outline Surface Mount Device S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -16V 60m - 4A Description SOT-23 G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 www..com Parameter Rating -16 8 -4 -3.3 -12 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit /W Data and specifications subject to change without notice 200414041 AP2307N Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA Min. -16 - Typ. -0.01 12 15 1.3 4 8 11 54 36 985 180 160 Max. Units 60 70 90 -1.0 -1 -25 100 24 1580 V V/ m m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-3.0A VGS=-1.8V, ID=-2.0A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-5V, ID=-4A VDS=-16V, VGS=0V VDS=-12V, VGS=0V VGS=8V ID=-4A VDS=-12V VGS=-4.5V VDS=-10V ID=-1A RG=3.3,VGS=-10V RD=10 VGS=0V VDS=-15V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-1.2A, VGS=0V IS=-4A, VGS=0V, dI/dt=100A/s Min. - Typ. 39 26 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270/W when mounted on min. copper pad. AP2307N 16 14 14 T A =25 C o -ID , Drain Current (A) ID , Drain Current (A) 12 -5.0V -4.5V -3.0V -2.5V V G = - 1.8 V T A = 150 o C 12 10 -5.0V -4.5V -3.0V -2.5V V G = - 1.8 V 10 8 8 6 6 4 4 2 2 0 0 1 2 3 4 5 6 0 0 2 4 6 8 -V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 1.6 I D =-3A T A =25 o C 60 1.4 ID= -4A V G = -4.5V Normalized RDS(ON) 1 3 5 7 9 RDS(ON) ( ) 1.2 1.0 50 0.8 40 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 3 1.5 2 T j =150 o C 1 T j =25 o C Normalized -VGS(th) (V) 1 -IS(A) 1.0 0.5 0 0.0 0 0.2 0.4 0.6 0.8 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2307N 8 10000 f=1.0MHz -VGS , Gate to Source Voltage (V) I D =-4A V DS =-16V 6 C (pF) 4 1000 C iss 2 C oss C rss 0 100 0 8 16 24 32 1 5 9 13 17 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100.00 1 Duty factor=0.5 Normalized Thermal Response (Rthja) 0.2 10.00 0.1 0.1 1ms -ID (A) 1.00 0.05 0.01 PDM t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270/W 10ms 100ms 0.10 0.01 Single Pulse T A =25 C Single Pulse 0.01 0.1 1 10 o 1s DC 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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